Specifically designed for Automotive applications, this HEXFET® Power IRFZ44N MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. \n

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• Gate-to-Source Voltage ± 20 V
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• Avalanche Current 25 A
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• Power Dissipation 94 W
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• Repetitive Avalanche Energy 9.4 mJ
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• Peak Diode Recovery dv/dt ƒ 5.0 V/ns
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• Advanced Process Technology
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• Ultra Low On-Resistance
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• Dynamic dv/dt Rating
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• 175°C Operating Temperature
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• Fast Switching
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• Fully Avalanche Rated
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