Description

IR2110

Power MOSFET & IGBT Driver

The IR2110 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedised monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The Output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

Datasheet: PDF

Features

• Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune

• Gate drive supply range from 10 to 20V

• Under voltage lockout for both channels

• 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset

• CMOS Schmitt-trigger inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs

• Also available LEAD-FREE

  Description

  IR2110

  Power MOSFET & IGBT Driver

  The IR2110 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedised monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The Output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

  Datasheet: PDF

  Features

  • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune

  • Gate drive supply range from 10 to 20V

  • Under voltage lockout for both channels

  • 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset

  • CMOS Schmitt-trigger inputs with pull-down

  • Cycle by cycle edge-triggered shutdown logic

  • Matched propagation delay for both channels

  • Outputs in phase with inputs

  • Also available LEAD-FREE