Description

IRF630

IRF630 N-Channel MOSFET

Material: metal-oxide-semiconductor
Polarity: N-channel
Package: TO-220
Power Switch
Drain current Ic: 10 Ampere
Maximum Drain Voltage – source (Uds): 200 Volts
Maximum source-gate voltage (Ugs): 20 Volts
Maximum junction temperature (Tj): 150^oC
Maximum Power Dissipation (Pd): 100 Watt

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS: HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.